Supply and commissioning of an Atomic Layer Deposition Coating System

Description

An Atomic Layer Deposition system is sought after to encapsulate semiconductor active devices such as (but not limited to) Gallium Nitride and Silicon. The ideal system will be deployed for academic research and located within a cleanroom micro-fabrication facility. Lot 1: The Institute of Photonics is seeking to complement their cleanroom micro-fabrication facility equipment with an Atomic Layer Deposition (ALD) system. The ALD will be used to encapsulate semiconductor active devices typically (but not limited to) Gallium Nitride (GaN) light-emitting diodes and Silicon (Si)/ metal-based electrodes. The system will be employed for academic research. It is purposed to bring the unique capability of conformal nanoscale growth of dielectric materials, such as Hafnium oxide (HfO2) and Silica (SiO2), with low-pinhole density. The precursors should be contained within the system itself. Option for high and low (plasma-assisted) temperatures deposition are considered. The system should allow the load-lock loading and process of a single 4” wafer.. The University is publishing this PIN for initial Market Research and Engagement purposes. The University may conduct further market engagement with the suppliers that note interest in this opportunity.