Supply and Commissioning of an Inductively Coupled Plasma Etcher

Description

An Inductively Coupled Plasma Etcher is sought to process semiconductor materials such as (but not limited to) Gallium Nitride and Silicon. The ideal system will be deployed for academic research and located within a cleanroom micro-fabrication facility. Lot 1: The Institute of Photonics is seeking to complement their cleanroom micro-fabrication facility equipment with an Inductively Coupled Plasma Etcher. The system will be used to process semiconductor materials typically (but not limited to) Gallium Nitride (GaN) and Silicon (Si) passive and active devices. The system will be employed for academic research. It is purposed to bring extra capability to already existing assets. The system sought after is destined to provide the capability of chlorinated and fluorinated distinct plasma etchings. Chlorine-based etch rates for GaN should be in the order of few hundreds of nanometres per minute (c.a. 500 nm/min). Selectivity to typical masking material such as photoresist and silica (SiO2) should be guaranteed. Fluorinated-based plasma in a Deep Reactive Ion Etching mode of Silicon should be provisioned to execute the Bosch process. The system should allow the load-lock handling and processing of a single 4” wafer.. The University is publishing this PIN for initial Market Research and Engagement purposes. The University may conduct further market engagement with the suppliers that note interest in this opportunity.